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this is information on a product in full production. february 2014 docid024365 rev 4 1/17 17 STGW60H65DFB stgwt60h65dfb trench gate field-stop igbt, hb series 650 v, 60 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? very low saturation voltage: v ce(sat) = 1.6 v (typ.) @ i c = 60 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode ? lead free package applications ? photovoltaic inverters ? high frequency converters description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. the device is part of the new "hb" series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. g (1) e (3) c (2, tab) to-247 1 2 3 to-3p 1 2 3 tab table 1. device summary order code marking package packaging STGW60H65DFB gw60h65dfb to-247 tube stgwt60h65dfb gwt60h65dfb to-3p tube www.st.com
contents STGW60H65DFB, stgwt60h65dfb 2/17 docid024365 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid024365 rev 4 3/17 STGW60H65DFB, stgwt60h65dfb electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 80 (1) 1. current level is limited by bond wires. a i c continuous collector current at t c = 100 c 60 a i cp (2) 2. pulse width limited by ma ximum junction temperature. pulsed collector current 240 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 80 (1) a i f continuous forward current at t c = 100 c 60 a i fp (2) pulsed forward current 240 a p tot total dissipation at t c = 25 c 375 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 1.14 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW60H65DFB, stgwt60h65dfb 4/17 docid024365 rev 4 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.60 2 v v ge = 15 v, i c = 60 a t j = 125 c 1.75 v ge = 15 v, i c = 60 a t j = 175 c 1.85 v f forward on-voltage i f = 60 a 2 2.6 v i f = 60 a t j = 125 c 1.7 v i f = 60 a t j = 175 c 1.6 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 6.0 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -7792- pf c oes output capacitance - 262 - pf c res reverse transfer capacitance -158-pf q g total gate charge v cc = 520 v, i c = 60 a, v ge = 15 v, see figure 28 -306-nc q ge gate-emitter charge - 126 - nc q gc gate-collector charge - 58 - nc
docid024365 rev 4 5/17 STGW60H65DFB, stgwt60h65dfb electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 5 , v ge = 15 v, see figure 27 -51 ns t r current rise time - 22 - ns (di/dt) on turn-on current slope - 2218 a/s t d(off) turn-off delay time 160 ns t f current fall time - 18 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 1086 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 626 - j e ts total switching losses - 1712 - j t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 5 , v ge = 15 v, t j = 175 c, see figure 27 -50 ns t r current rise time - 30 - ns (di/dt) on turn-on current slope - 2050 a/s t d(off) turn-off delay time 184 ns t f current fall time - 117 - ns e on (1) turn-on switching losses - 2350 - j e off (2) turn-off switching losses - 1017 - j e ts total switching losses - 3367 - j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 60 a, v r = 400 v, di/dt = 100a/s , v ge = 15 v, see figure 27 -60-ns q rr reverse recovery charge - 99 - nc i rrm reverse recovery current - 3.3 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 187 - a/s e rr reverse recovery energy - 68 - j t rr reverse recovery time i f = 60 a, v r = 400 v, di/dt = 100a/s , v ge = 15 v, t j = 175 c, see figure 27 - 310 - ns q rr reverse recovery charge - 1550 - nc i rrm reverse recovery current - 10 - a di rr/ /dt peak rate of fall of reverse recovery current during t b -59-a/s e rr reverse recovery energy - 674 - j
electrical characteristics STGW60H65DFB, stgwt60h65dfb 6/17 docid024365 rev 4 2.1 electrical characteristics (curve) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) i c 60 40 20 0 0 2 v ce (v) 4 (a) 13 80 100 9v 11v v ge =15v gipd230820131147fsr i c 60 40 20 0 0 2 v ce (v) 3 (a) 14 80 100 7v 11v v ge =15v 9v gipd230820131205fsr figure 4. transfer characteristics figure 5. collector current vs. case temperature i c 60 40 20 0 79 v ge (v) 10 (a) 811 80 100 -40c t j =175c 25c v ce = 10v gipd270820131335fsr i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 80 125 150 gipd270820131347fsr figure 6. power dissipation vs. case temperature figure 7. v ce(sat) vs. junction temperature p tot 300 200 100 0 0 50 t c (c) 75 (w) 25 100 125 150 gipd270820131401fsr v ce(sat) 1.8 1.6 1.4 1.2 -50 0 t j (c) (v) 50 100 150 2.6 2.4 2.2 2.0 v ge = 15v i c = 120a i c = 60a i c = 30a gipd270820131410fsr
docid024365 rev 4 7/17 STGW60H65DFB, stgwt60h65dfb electrical characteristics figure 8. v ce(sat) vs. collector current figure 9. forward bias safe operating area v ce(sat) 1.4 1.2 1.0 0.8 020 i c (a) (v) 40 60 80 2.2 2.0 1.8 1.6 v ge = 15v t j = 175c t j = 25c t j = -40c 2.4 100 gipd270820131423fsr 10 s 100 s 1 ms (single pulse t c =25c, tj<=175c; vge=15v) i c 100 10 1 0.1 1 v ce (v) (a) 10 100 gipd270820131505fsr figure 10. diode v f vs. forward current figure 11. normalized bv ces vs. junction temperature i c 2 1.6 1.2 0.8 20 i f (a) (a) 40 60 80 100 2.4 2.8 t j = -40 c t j = 25 c t j = 175 c gipd270820131550fsr bv ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 2ma gipd280820131415fsr figure 12. normalized v ge(th) vs. junction temperature figure 13. gate charge vs. gate-emitter voltage v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 i c = 1ma gipd280820131503fsr v ge (v) 4 2 0 0 q g (nc) 50 100 150 200 6 8 250 300 350 10 12 14 v cc = 520v, i c = 60a i g = 1ma gipd280820131507fsr
electrical characteristics STGW60H65DFB, stgwt60h65dfb 8/17 docid024365 rev 4 figure 14. switching losses vs temperature figure 15. switching losses vs gate resistance e (j) 1800 1000 200 25 t j (c) 50 75 100 125 2600 v cc = 400v, v ge = 15v r g = 10, i c = 60a 150 e off e on gipd290820131623fsr c(pf) 2100 1300 500 2 r g () 610 2900 v cc = 400v, v ge = 15v i c = 60a, t j = 175 c 14 18 e off e on gipd280820131527fsr figure 16. switching losses vs collector curren t figure 17. switching losses vs collector emitter voltage e (j) 2000 1000 0 0 i c (a) 20 40 60 80 3000 4000 5000 6000 7000 v cc = 400v, v ge = 15v r g = 10, t j = 175c 100 e off e on gipd280820131538fsr e (j) 2300 1300 300 150 v ce (v) 250 350 450 3300 t j = 175c, v ge = 15v r g = 10, i c = 60a e off e on 4300 gipd280820131554fsr figure 18. switching times vs collector current figure 19. switching times vs gate resistance (ns) 100 10 1 0 i c (a) 20 40 60 80 t j = 175c, v ge = 15v r g = 10, v cc = 400v 100 t f t doff 120 140 t don t r gipd280820131613fsr (ns) 1000 100 10 2 r g () 46810 t j = 175c, v ge = 15v i c = 60a, v cc = 400v 12 t f t doff 14 16 t don t r 18 20 gipd280820131622fsr
docid024365 rev 4 9/17 STGW60H65DFB, stgwt60h65dfb electrical characteristics figure 20. reverse recovery current vs. diode current slope figure 21. reverse recovery time vs. diode current slope i rm (a) 70 30 0 0 di/dt(a/s 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 50 60 40 20 10 80 t j = 25c gipd280820131635fsr t rr (s) 150 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 250 200 100 50 t j = 25c 300 gipd280820131643fsr figure 22. reverse recovery charge vs. diode current slope figure 23. reverse recovery energy vs. diode current slope q rr (nc) 1500 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 2500 2000 1000 500 t j = 25c 3000 3500 4000 gipd280820131650fsr e rr (j) 300 0 0 di/dt(a/s) 500 1000 1500 v r = 400v, i f = 60a t j = 175c 2000 2500 500 400 200 100 t j = 25c 600 700 800 gipd280820131656fsr figure 24. capacitance variations c(pf) 1000 100 10 0.1 v ce (v) 110 10000 c ies c oes c res gipd280820131518fsr
electrical characteristics STGW60H65DFB, stgwt60h65dfb 10/17 docid024365 rev 4 figure 25. thermal impedance figure 26. thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid024365 rev 4 11/17 STGW60H65DFB, stgwt60h65dfb test circuits 3 test circuits figure 27. test circuit for inductive load switching figure 28. gate charge test circuit figure 29. switching waveform figure 30. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGW60H65DFB, stgwt60h65dfb 12/17 docid024365 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. figure 31. to-247 drawing 0075325_g
docid024365 rev 4 13/17 STGW60H65DFB, stgwt60h65dfb package mechanical data table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STGW60H65DFB, stgwt60h65dfb 14/17 docid024365 rev 4 figure 32. to-3p drawing 8045950_a
docid024365 rev 4 15/17 STGW60H65DFB, stgwt60h65dfb package mechanical data table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
revision history STGW60H65DFB, stgwt60h65dfb 16/17 docid024365 rev 4 5 revision history table 10. document revision history date revision changes 12-mar-2013 1 initial release. 30-aug-2013 2 document status promoted from preliminary to production data. added section 2.1: electrical characteristics (curve) . 31-oct-2013 3 updated v ce(sat) in table 4: static characteristics . 24-feb-2014 4 updated title and description in cover page.
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